Semiconductor Samsung Leapfrogs Toward 1000-Layer NAND With First 900-Layer V-NAND Prototype, Stacking Two 450-Layer Cells Into One Hassan Mujtaba • at EDT Add on Google Samsung is getting closer to its 1000-Layer V-NAND tech as it achieves the first 900-Layer prototype, bracing for swift competition with rivals. Samsung 900-Layer V-NAND Prototype Combines Two 450-Layer Cells Into One, As It Is Inches Away From 1000-Layer NAND Samsung is a pioneer in storage semiconductors. Its V-NAND technology is seen as one of the best on the market, and back in 2024, the company planned to roll out 1000-layer NAND using new "ferroelectric" materials. Related Story PlayStation State of Play, June 2, 2026: Where To Watch, What to Expect Beyond Marvel’s Wolverine In 90-Minutes Long PresentationAs per ETNews, Samsung achieved its first 900-Layer V-NAND technology using CMB (Cell Multi-Bonding) technology, which essentially couples two 450-layer cell stacks into a single device. With 900-Layers of V-NAND, Samsung will be able to dramatically boost the capacity of storage solutions such as SSDs, which are featured across all aspects of the computing world, including Enterprise and Client segments such as Servers, Desktops, Laptops, smartphones, and more. According to the semiconductor industry on the 25th, Samsung Electronics recently implemented a 900-layer Class V-NAND integrated system utilizing "Cell Multi-Bonding (CMB)" technology, which bonds two 450-layer cell wafers into one. ETNews To achieve a staggering 900-Layer V-NAND, Samsung had a few obstacles to overcome, with wafer warping being one of the primary concerns. But that has been resolved with the introduction of the Upper Chuck Design. Other fixes included misalignment errors through the use of "Overlay Correction" technologies. Currently, SK Hynix leads the race as it was the first to develop and offer 321-layer NAND technology. The work is already underway on 400-layer NAND, which will be achieved using Vertical Bonding at Samsung & Hybrid Bonding at SK Hynix. At the same time, Chinese YMTC (Yangtze Memory Technologies Co) is also speeding up its NAND plans. The company already offers 294-layer and 232-layer NAND devices and is closing the gap with offshore companies such as Samsung, SK Hynix, and Micron. YMTC is also investing big in new fabs, which are set to double its current wafer output capacity at a crucial time when the markets are facing a significant supply-demand gap due to the AI hyper-cycle. The stacked NAND approach to achieve 900+ layers is still in a prototype stage, but it paves the path ahead for future storage expansion. 1000-Layer V-NAND is currently aiming for a 2030 release with 400+ layers rolling out in the coming years. About the : A Software Engineer by training and a PC enthusiast by passion, Hassan Mujtaba serves as 's for hardware section. With years of experience in the industry, he specializes in deep-dive technical analysis of next-generation CPU and GPU architectures, motherboards, and cooling solutions. His work involves not only breaking news on upcoming technologies but also extensive hands-on reviews and benchmarking. Follow on Google to get more of our news coverage in your feeds. Further Reading Huawei Planning To Launch Chip Lithography Equal To TSMC’s 1.4nm Process By 2031, Showing That U.S. Sanctions Won’t Stifle Its Progress AMD’s Next-Gen Zen 7 “Grimlock” CPUs To Utilize TSMC 1.4nm Process Tech & FOPLP Packaging, Launching in 2028 PlayStation 6’s Zen 6 CPU Will Likely Deliver Full-Speed PlayStation 3 Emulation, As Cell Architecture Continues To Cause Challenges Steam Machine Is Close To Release, As System Was Added to Official Vulkan 1.4 Conformant Products With More Specs Details Read all on Samsung Leapfrogs Toward 1000-Layer NAND With First 900-Layer V-NAND Prototype, Stacking Two 450-Layer Cells Into One
